High-Performance Negative Capacitance Field-Effect Transistors with Synthetic Monolayer MoS2, ACS Nano , 제19권(집) , 제18호 , PP.17503~17513 , 2025.05.02

Tight-binding device modeling of 2-D topological insulator field-effect transistors with gate-induced phase transition, IEEE TRANSACTIONS ON ELECTRON DEVICES , 제71권(집) , 제9호 , PP.5739~5743 , 2024.09.01

First principles reaction processes of Co(CO)3NO as an atomic layer deposition precursor on SiO2 and Co surfaces, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , 제42권(집) , 제5호 , PP.52401~ , 2024.09.01

Infrared emissivity - resistivity correlation of Ru thin films for EUV pellicle applications, NANO , 제19권(집) , 제6호 , PP.2450020~ , 2024.06.01

Self-Organized Phase-Composite Nanocrystal Solids with Superior Charge Transport, ACS Applied Materials & Interfaces , 제15권(집) , 제46호 , PP.53835~53846 , 2023.11.08

Two types of three-dimensional quantum Hall effects in multilayer WTe2, PHYSICAL REVIEW B , 제107권(집) , 제24호 , 2023.06.07

Symmetric Trotterization in digital quantum simulation of quantum spin dynamics, JOURNAL OF THE KOREAN PHYSICAL SOCIETY , 제82권(집) , 제5호 , PP.479~485 , 2023.03.01

Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths, Nature Communications , 제13권(집) , 제1호 , 2022.12.06

Effect of localization on photoluminescence and zero-field splitting of silicon color centers, PHYSICAL REVIEW B , 제106권(집) , 제13호 , PP.134107~ , 2022.10.17

van der Waals 2D metallic materials for low-resistivity interconnects, Journal of Materials Chemistry C , 제10권(집) , 제14호 , PP.5627~5635 , 2022.04.07

First-principles mobility prediction for amorphous semiconductors, PHYSICAL REVIEW B , 제105권(집) , 제8호 , PP.85201~ , 2022.02.22

Ambient effect on the Curie temperatures and magnetic domains in metallic two-dimensional magnets, npj 2D Materials and Applications , 제5권(집) , 제1호 , PP.62~ , 2021.06.28

First-principles study on electron-induced excitations of Atomic Layer Deposition precursors: Inelastic electron wave-packet scattering with cobalt tricarbonyl nitrosyl Co(CO)3NO using time-dependent density functional theory, JOURNAL OF PHYSICAL CHEMISTRY A , 제125권(집) , 제21호 , PP.4524~4533 , 2021.06.03

Femtosecond quantum dynamics of excited-state evolution of halide perovskites: Quantum chaos of molecular cations, Journal of Physical Chemistry C , 제125권(집) , 제19호 , PP.10676~10684 , 2021.05.20

Nonadiabatic dynamics of cobalt tricarbonyl nitrosyl for ligand dissociation induced by electronic excitation, Scientific Reports , 제11권(집) , 제1호 , PP.8997~ , 2021.04.26

Surface-energy-driven preferential grain growth of metal halide perovskites: Effects of nanoimprint lithography beyond direct patterning, ACS Applied Materials & Interfaces , 제13권(집) , 제4호 , PP.5368~5378 , 2021.02.03

Real-time ab initio simulation of inelastic electron scattering using the exact, density functional, and alternative approaches, PHYSICAL CHEMISTRY CHEMICAL PHYSICS , 제22권(집) , 제16호 , PP.8616~8624 , 2020.04.28

First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6, JOURNAL OF APPLIED PHYSICS , 제126권(집) , 제18호 , PP.185701~ , 2019.11.14

First-principles study of metal-graphene edge contact for ballistic Josephson junction, Physical Review Materials , 제3권(집) , 제6호 , PP.64801~ , 2019.06.05

Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors, JOURNAL OF APPLIED PHYSICS , 제118권(집) , 제15호 , PP.155105~ , 2015.10.21

Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs, SOLID-STATE ELECTRONICS , 제74권(집) , 제SI호 , PP.2~6 , 2012.08.01

Gate capacitance modeling and diameter-dependent performance of nanowire MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES , 제59권(집) , 제4호 , PP.1037~1045 , 2012.04.01

EOT of 0.62 nm and high electron mobility in La-silicate/Si structure based nMOSFETs achieved by utilizing metal-inserted poly-Si stacks and annealing at high temperature, IEEE TRANSACTIONS ON ELECTRON DEVICES , 제59권(집) , 제2호 , PP.269~276 , 2012.02.01

Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process, SOLID-STATE ELECTRONICS , 제68권(집) , PP.68~72 , 2012.02.01

Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis, Journal of Applied Physics , 제109권(집) , 제11호 , PP.113712~ , 2011.06.01

Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors, APPLIED PHYSICS LETTERS , 제97권(집) , 제3호 , PP.32101~ , 2010.07.19

Size-dependent properties of ballistic silicon nanowire field effect transistors, JOURNAL OF APPLIED PHYSICS , 제107권(집) , 제11호 , PP.113705~ , 2010.06.01